物料参数
| Number of channels: | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 5.5 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 2.2 |
| Vos (offset voltage at 25°C) (max) (mV): | 0.025 |
| Offset drift (typ) (µV/°C): | 0.32 |
| Input bias current (max) (pA): | 10 |
| GBW (typ) (MHz): | 5.5 |
| Features: | EMI Hardened, Small Size, e-Trim™ |
| Slew rate (typ) (V/µs): | 2 |
| Rail-to-rail: | In, Out |
| Iq per channel (typ) (mA): | 0.76 |
| Vn at 1 kHz (typ) (nV√Hz): | 7.5 |
| CMRR (typ) (dB): | 90 |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 125 |
| Iout (typ) (A): | 0.03 |
| Architecture: | CMOS |
| Input common mode headroom (to negative supply) (typ) (V): | -0.1 |
| Input common mode headroom (to positive supply) (typ) (V): | 0.1 |
| Output swing headroom (to negative supply) (typ) (V): | 0.01 |
| Output swing headroom (to positive supply) (typ) (V): | -0.01 |
| THD + N at 1 kHz (typ) (%): | 0.00027 |
| Number of channels: | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 5.5 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 2.2 |
| Vos (offset voltage at 25°C) (max) (mV): | 0.025 |
| Offset drift (typ) (µV/°C): | 0.32 |
| Input bias current (max) (pA): | 10 |
| GBW (typ) (MHz): | 5.5 |
| Features: | EMI Hardened, Small Size, e-Trim™ |
| Slew rate (typ) (V/µs): | 2 |
| Rail-to-rail: | In, Out |
| Iq per channel (typ) (mA): | 0.76 |
| Vn at 1 kHz (typ) (nV√Hz): | 7.5 |
| CMRR (typ) (dB): | 90 |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 125 |
| Iout (typ) (A): | 0.03 |
| Architecture: | CMOS |
| Input common mode headroom (to negative supply) (typ) (V): | -0.1 |
| Input common mode headroom (to positive supply) (typ) (V): | 0.1 |
| Output swing headroom (to negative supply) (typ) (V): | 0.01 |
| Output swing headroom (to positive supply) (typ) (V): | -0.01 |
| THD + N at 1 kHz (typ) (%): | 0.00027 |
无库存